| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2020-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba66dfbb81ae8c463244e79d1dca4f57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b6233a4c496bfd6a9ae1287130e4e6a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f181b76dfa2729502b10d4e238c9f6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2f31c00a86e3079a0d8abdd9f15c8ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cce075542b2083a3c7550e071f096a22 |
| publicationDate |
2021-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112582402-A |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
A method of fabricating a device includes providing a first fin in a first device type region and providing a second fin in a second device type region. Each of the first fin and the second fin includes a plurality of semiconductor channel layers. A two-step recess of the STI region is performed on opposite sides of each of the first fin and the second fin to expose a first number of semiconductor channel layers of the first fin and a second number of semiconductor trenches of the second fin Dao layer. The first gate structure is formed in the first device type region, and the second gate structure is formed in the second device type region. A first gate structure is formed over a first fin having a first number of exposed semiconductor channel layers, and a second gate structure is formed over a second fin having a second number of exposed semiconductor channel layers. Embodiments of the present invention also relate to semiconductor devices and methods of fabricating the same. |
| priorityDate |
2019-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |