http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112582268-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8fbf590463d3518a746d90a6a2c1c34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e829b93e1bdf87272f2aaf3baaaa0f4 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate | 2019-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1311db58a07f235d5de59ef0e3085343 |
publicationDate | 2021-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-112582268-A |
titleOfInvention | Semiconductor device and forming method |
abstract | The embodiment of the invention provides a semiconductor device and a forming method thereof. In the embodiment of the invention, the first epitaxial layer with lower doping concentration and the second epitaxial layer and the third epitaxial layer with higher doping concentration than the first epitaxial layer are sequentially formed. The concentration of the doped ions from the side wall of the channel region to the source and drain regions of the region of the third epitaxial layer is gradually increased, the ion diffusion rate can be controlled, and transient enhanced diffusion caused by large concentration difference is avoided. Further, the short channel effect can be suppressed, and the performance of the semiconductor device can be improved. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023102906-A1 |
priorityDate | 2019-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.