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filingDate 2019-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1311db58a07f235d5de59ef0e3085343
publicationDate 2021-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-112582268-A
titleOfInvention Semiconductor device and forming method
abstract The embodiment of the invention provides a semiconductor device and a forming method thereof. In the embodiment of the invention, the first epitaxial layer with lower doping concentration and the second epitaxial layer and the third epitaxial layer with higher doping concentration than the first epitaxial layer are sequentially formed. The concentration of the doped ions from the side wall of the channel region to the source and drain regions of the region of the third epitaxial layer is gradually increased, the ion diffusion rate can be controlled, and transient enhanced diffusion caused by large concentration difference is avoided. Further, the short channel effect can be suppressed, and the performance of the semiconductor device can be improved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023102906-A1
priorityDate 2019-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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