| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 |
| filingDate |
2020-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d46460d39af31364e6971778c3b6e12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6b515f78dc088e93fda35e9c9943dc4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94f3aa16f868049113e09a991e0edd8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cde6814ca5b5d8f997438d7528eb16d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a0c59f21e21c6a7917cc275afbc0df5 |
| publicationDate |
2021-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112563242-A |
| titleOfInvention |
semiconductor device |
| abstract |
A semiconductor device is provided. The semiconductor device includes a first interlayer insulating film provided on a substrate and having a first trench. The first lower conductive pattern fills the first trench and includes a first valley region and a second valley region spaced apart from each other in a first direction parallel to the upper surface of the substrate. The first valley region and the second valley region are recessed toward the base. The second interlayer insulating film is disposed on the first interlayer insulating film and includes a second trench exposing at least a portion of the first lower conductive pattern. The upper conductive pattern fills the second trench and includes an upper barrier film and an upper filling film disposed on the upper barrier film. The upper conductive pattern at least partially fills the first valley region. |
| priorityDate |
2019-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |