| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa9d66b838a3e187f208c5c40d0d7972 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-022 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 |
| filingDate |
2020-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c74b595273c72c3c62662cb431a46ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_811fdf460fef2c76dfd9d62e40a6adce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea4f7314183590c9265f0ee347af523f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_502bdb5ffd76fd9b5d50504448ba9bff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59c9368432e4d2f8fc622dce4696b30a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c54306f02cfc00fa8de52663320a3ef5 |
| publicationDate |
2021-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112538344-A |
| titleOfInvention |
A germanium-erbium doped tin dioxide multilayer composite film and preparation method thereof |
| abstract |
The invention discloses a germanium quantum-erbium doped tin dioxide multilayer composite semiconductor film and a preparation method thereof. The invention utilizes a high vacuum multi-radio frequency target magnetron sputtering system to alternately perform erbium on the cleaned substrate. Sputtering deposition of doped tin dioxide sub-layer and amorphous germanium sub-layer, thermal annealing of the deposited erbium-doped tin dioxide/amorphous germanium multilayer compound semiconductor thin film in a nitrogen atmosphere to make amorphous germanium The germanium atoms in the sublayer are aggregated and crystallized to form germanium quantum dots, and the germanium quantum-erbium doped tin dioxide multilayer composite semiconductor thin film is obtained alternately stacked on the substrate. In the invention, a germanium quantum dot layer is inserted into the erbium-doped tin dioxide semiconductor thin film, and the electronic strong correlation characteristic of the germanium quantum dot is used to sensitize to enhance the optical activity of the erbium luminescence center and improve its luminous efficiency; The size of the erbium luminescence center in erbium-doped oxide semiconductor materials can be adjusted by changing its electronic correlation properties. |
| priorityDate |
2020-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |