| abstract |
The semiconductor device includes a substrate, at least one first isolation structure, at least two second isolation structures, and an epitaxial structure. The substrate has a plurality of semiconductor fins therein. The first isolation structure is disposed between the semiconductor fins. The semiconductor fins are disposed between the second isolation structures, and the second isolation structures extend more into the substrate than the first isolation structures. An epitaxial structure is disposed on the semiconductor fin. At least one void exists between the first isolation structure and the epitaxial structure. The invention also provides a manufacturing method of the semiconductor device. |