http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112490287-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7789 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
| filingDate | 2020-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112490287-B |
| titleOfInvention | Gallium nitride integrated field effect transistor with double working modes and preparation method thereof |
| abstract | The invention discloses a gallium nitride integrated field effect transistor with double working modes and a preparation method thereof. And growing p-GaN on the sidewall of the AlGaN/GaN heterojunction by adopting a selective area epitaxial growth method to form a p-GaN/2DEG junction. P-type and n-type ohmic contact electrodes are respectively prepared on the p-GaN and AlGaN/GaN heterojunction, and an insulated gate electrode is prepared on one side of the AlGaN/GaN heterojunction of the p-GaN/2DEG junction. The GaN integrated field effect transistor has enhancement mode and depletion mode working modes, avoids preparing interconnection metal by adopting a selective area epitaxial process based on AlGaN/GaN heterojunction, improves the functionality of an integrated device, reduces the parasitic effect of the integrated device, and has wide application prospect in the fields of high-performance GaN power devices and logic devices. |
| priorityDate | 2020-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.