| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80019bea504154349e76f729963bdb45 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0883 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate |
2020-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2f58a5459b2958e5a73314a9004fc14 |
| publicationDate |
2021-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112490279-A |
| titleOfInvention |
Nitrogen-plane III/nitride epitaxial structure and its active device and its gate protection device |
| abstract |
The present invention relates to a nitrogen-plane III/nitride epitaxial structure and its active element and its gate protection element. The AlGaN/GaN epitaxial structure on the nitrogen side includes a silicon substrate; a carbon-doped buffer layer on the silicon substrate; and a carbon-doped intrinsic gallium nitride on the buffer layer layer; an intrinsic aluminum gallium nitride buffer layer on the carbon-doped intrinsic gallium nitride layer; an intrinsic gallium nitride channel layer on the intrinsic aluminum gallium nitride buffer layer; and an intrinsic gallium nitride channel layer on the intrinsic aluminum gallium nitride layer. In device design, by connecting the depletion-type AlGaN/GaN high-speed electron mobility transistor to the gate of the P-type GaN gate enhancement mode aluminum-gallium nitride/gallium nitride high-speed electron mobility transistor , thereby protecting the gate of the p-type gallium nitride gate enhancement mode aluminum gallium nitride/gallium nitride high-speed electron mobility transistor can be protected at any gate voltage. |
| priorityDate |
2019-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |