| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0771
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-015 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-0032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00261
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00015 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
| filingDate |
2020-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94ec9d92fcfc4bae3f55a9b106cd4415
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_536eb7bb4dd9d9c96d402869647362e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_682bb931e9c0ab7d53fddc8902087309 |
| publicationDate |
2021-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112429697-A |
| titleOfInvention |
Semiconductor device and method of forming the same |
| abstract |
Various embodiments of the present disclosure relate to a semiconductor device and a method of forming the same. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. The first cavity and the second cavity are disposed in the dielectric structure. A MEMS substrate is disposed on the dielectric structure, wherein the MEMS substrate includes a first movable diaphragm overlying the first cavity and a first movable diaphragm overlying the second cavity A second movable diaphragm on the cavity. A first functional structure overlies the first movable diaphragm, wherein the first functional structure includes a first material having a first chemical composition. A second functional structure overlies the second movable diaphragm, wherein the second functional structure is laterally spaced apart from the first functional structure, and wherein the second functional structure includes a A second material of a second chemical composition having a different chemical composition. |
| priorityDate |
2019-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |