http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112420768-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-354 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 |
| filingDate | 2020-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112420768-B |
| titleOfInvention | A transistor with switchable infrared photoelectric memory and detection functions and preparation method thereof |
| abstract | The invention provides a transistor capable of switching infrared photoelectric memory and detection functions and a preparation method thereof, and belongs to the technical field of photodetectors and optical energy storage. It includes a bottom-up silicon substrate, an IC circuit, a circuit dielectric layer, and a detector array composed of a plurality of detector units arranged in an array. The detector unit includes a bottom-up gate electrode and a dielectric layer. , graphene, a hole blocking layer and a donor-acceptor hybrid film, further comprising metal electrodes located on the graphene and at both ends of the hole blocking layer. The transistor of the invention has an optical memory function, and by adjusting the gate voltage, the transistor can be switched between a detection mode with optical memory, a detection mode without optical memory, a detection mode for electrically erasing optical memory and a completely closed state, there are It has the potential to be applied to switching modulators based on infrared optical communication technology and dual-function switching of infrared real-time imaging and energy storage time-lapse imaging. The preparation is simple, and large-area array devices can be prepared. |
| priorityDate | 2020-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.