http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112420768-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c020a3bfe9d62d22c33f10c20d4262b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-354 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-30 |
| filingDate | 2020-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_040d48a2ed5f3f9f952821dadc52c936 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b4c663f2c87d4dda645828c4d840fa2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8e98f547763899dede28c14e2d02e2f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e455cada05d6e10438ba720ae7f2d4a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb6ac69de7b26bd568f1c7cdd3b46f9d |
| publicationDate | 2021-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112420768-A |
| titleOfInvention | A transistor with switchable infrared photoelectric memory and detection functions and preparation method thereof |
| abstract | The invention provides a transistor capable of switching infrared photoelectric memory and detection functions and a preparation method thereof, belonging to the technical field of photodetectors and optical energy storage. It includes a bottom-up silicon substrate, an IC circuit, a circuit dielectric layer, and a detector array composed of a plurality of detector units arranged in an array. The detector unit includes a bottom-up gate electrode and a dielectric layer. , graphene, a hole blocking layer and a donor-acceptor hybrid film, further comprising metal electrodes located on the graphene and at both ends of the hole blocking layer. The transistor of the present invention has an optical memory function, and by adjusting the gate voltage, the transistor can be switched between a detection mode with optical memory, a detection mode without optical memory, a detection mode for electrically erasing optical memory, and a completely closed state. It has the potential to be applied to switching modulators based on infrared optical communication technology and dual-function switching of infrared real-time imaging and energy storage time-lapse imaging. The preparation is simple, and large-area array devices can be prepared. |
| priorityDate | 2020-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.