http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112420604-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2020-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112420604-B |
| titleOfInvention | A preparation method of TSV vertical electrical interconnection device based on thermocompression bonding |
| abstract | The invention provides a method for preparing a TSV vertical electrical interconnection device based on thermocompression bonding, comprising: S1, etching through holes on a high-resistance silicon wafer (1); S2, thermal oxygen treatment of the high-resistance silicon wafer (1), to prepare the isolation layer (2); S3, to etch the low-resistance silicon wafer (3), to prepare the movable structure region (4) and the ohmic contact region (5); S4, thermocompression bonding with high resistance Silicon wafer (1) and low-resistance silicon wafer (3), make the ohmic contact area (5) be located above the through hole; S5, sputter the metal seed layer (6) on the inner wall of the through hole; S6, in the metal seed layer ( 6) Electroplating a metal filler layer (7) on the inner wall; S7, thinning and polishing the back surface of the high-resistance silicon wafer (1) to obtain a TSV vertical electrical interconnection device. The preparation method of the present invention can avoid problems such as size limitation and signal delay caused by long wiring in wire bonding, reduce capacitance/inductance, realize low power consumption between chips, and exhibit excellent performance in high-frequency and large-bandwidth circuits electrical properties. |
| priorityDate | 2020-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.