| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2020-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0ebf5d1b6aacd093c263e66c8045f05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46ca5fd54fb1f95f176b2d19ad924107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10ffe1da524153acd8e146962ad47dc7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f62b4e118976f4a418ce6ad9ddf6c16e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9b0527abf739165fefb1e13d9ca7b26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91aac787ba0aadcd08957249f129294e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e693bbf89f585cbc81db86b113801b1 |
| publicationDate |
2021-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112420491-A |
| titleOfInvention |
Gallium oxide epitaxial film and method for growing gallium oxide epitaxial film |
| abstract |
The invention discloses a method for improving the quality and the surface appearance of a gallium oxide epitaxial film. Growing beta-phase gallium oxide (beta-Ga) on cut angle sapphire substrate by halide vapor phase epitaxy method 2 O 3 ) And the gallium oxide epitaxial mode is changed from the multi-domain mode to the single-domain mode by adopting a proper substrate cutting angle, so that the gallium oxide film with high quality and smooth surface is obtained. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114293251-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113471064-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113394079-A |
| priorityDate |
2020-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |