http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112397379-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02694 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2020-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_950d0a8e2d459fef7cb129fef3685aa8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf4fe49b0d03ef3fcf8fd9af4233a7fa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2425dcddea996a645e6fd621bcd4cfc5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_228d848e86db34ab214927850a09bb91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2054783a7bf9e0f2e08e8ed98fed2013 |
| publicationDate | 2021-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112397379-A |
| titleOfInvention | Laser local annealing amorphous polycrystalline composite photoelectron integration method |
| abstract | The invention discloses a laser local annealing amorphous polycrystalline composite photoelectron integration method, which comprises the following steps: growing an amorphous silicon film on a silicon wafer (a waveguide lower cladding layer is covered on the silicon wafer) and depositing a protective layer, preparing a metal pattern on the protective layer, etching off the protective layer which is not covered by part of the metal pattern, and injecting doping ions into the amorphous silicon film; scanning laser beams over the metal pattern at a certain speed, reflecting most of the energy of the laser beams by the metal pattern covering area, forming a molten state by amorphous silicon at the uncovered part due to the absorption of a large amount of laser beam energy, activating implanted doping ions, finally forming polycrystalline silicon by annealing crystallization, and then carrying out a conventional process of a CMOS compatible silicon optical device. The method can realize the preparation of the amorphous polycrystalline composite photonic device under the low-temperature process, can directly integrate a low-loss high-speed photonic link on an electronic chip, and realizes a high-performance monolithic integrated photoelectric fusion chip. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114597290-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114597290-A |
| priorityDate | 2020-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.