http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112382924-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0425 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate | 2020-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112382924-B |
| titleOfInvention | Double-waveguide distributed feedback semiconductor laser and laser generation method |
| abstract | The present disclosure provides a dual waveguide distributed feedback semiconductor laser, including: the multilayer waveguide substrate comprises an N-surface electrode layer (1), a substrate layer (2), a buffer layer (3), a lower waveguide layer (4), a multi-quantum well active layer (5), an upper waveguide layer (6), a grating layer (7), an etching self-stopping layer (8), a cladding layer (9), an ohmic contact layer (10) and a P-surface electrode layer (11-12), wherein the layers are sequentially superposed, a first channel (15), a second channel (16) and a third channel (17) which are parallel are etched from the surface of the ohmic contact layer (10) to the substrate direction, a first waveguide (13) is formed between the first channel (15) and the second channel (16), a second waveguide (14) is formed between the second channel (16) and the third channel (17), the first waveguide (13) and the second waveguide (14) have the same size, the P-surface electrode layer (11-12) is arranged on the surfaces of the ohmic contact layer (10), the first channel (15) and the third channel (17), is divided into two parts by a second channel (16), and the two parts respectively correspond to the P-surface electrodes of the first waveguide (13) and the second waveguide (14). The laser provided by the disclosure can utilize the distributed feedback grating of the grating layer (7) to perform mode selection, can also utilize the space-time symmetry of the double waveguides to perform mode selection, and has a high side mode suppression ratio. |
| priorityDate | 2020-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.