http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112366518-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e106154a25296e72132de699559d897 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate | 2020-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f33015e896cc9cefbb36e9cf7feb34c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c3007a90d903d8b0addb7e839f86416 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_787359ab8e462c5eac580d5c99fa955a |
| publicationDate | 2021-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112366518-A |
| titleOfInvention | Distributed feedback laser and preparation method thereof |
| abstract | The invention discloses a distributed feedback laser and a preparation method thereof. The preparation method includes: preparing an epitaxial structure of a distributed feedback laser, the epitaxial structure includes a grating layer; the epitaxial structure includes a first surface and a second surface arranged oppositely; preparing photoelectrochemical etching of the first electrode; preparation of an absorption layer on the first surface and patterning of the absorption layer to form a grating pattern in the absorption layer; photoelectrochemical etching of the epitaxial structure on one side of the first surface to form a grating pattern in the grating layer ; Etching part of the epitaxial structure on the first surface side to form a ridge structure; preparing a first type ohmic contact metal on the surface of the ridge structure, and preparing a second type ohmic contact metal on the second surface side; scribing the epitaxial structure Slicing, cleaving, coating and splitting processes are used to form distributed feedback lasers. The technical problems of interface pollution caused by the preparation of the internal grating in the prior art, complicated process and fixed period of the internal grating make the working wavelength cannot be changed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115188842-A |
| priorityDate | 2020-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.