http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112362615-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98d31ffb798b252a10c488c93e6f3d55 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-3581 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-3577 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-3581 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-3577 |
| filingDate | 2020-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3716afcb0b3214fc8d3ca724ad866810 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23d0070c7d65b37257ce168bb25a1546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bf7c6631799a8d61eaa4ea607e6d613 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f53db5451d0b6464cee7ea15db49882b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8417ba094af0c17e15cf545835dd5ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c37a893b31bf36bbef8cdd9955a126a |
| publicationDate | 2021-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112362615-A |
| titleOfInvention | CNTs metasurface and microchannel integrated THz sensor and fabrication method |
| abstract | The invention discloses a THz sensor integrated with a CNTs metasurface and a microchannel. The bottom of the sample cell is uniformly etched with a periodic cylindrical structure, the edge of the substrate layer in contact with the thin film layer is also provided with a microfluidic channel, and the thin film layer is uniformly etched with periodic circular hole-like structures and periodic cylindrical structures. There is a one-to-one correspondence with the periodic circular hole-like structure, and the encapsulation layer is provided with a test window. The invention also discloses a manufacturing method of a THz sensor integrated with a CNTs supersurface and a microchannel. The invention solves the problem that the single CNTs film in the prior art has a low response amplitude to THz waves, the quality factor (Q value) of a single silicon material is low, and the sensor does not have a sample cell, which causes uneven distribution of the solution. cause high measurement errors. |
| priorityDate | 2020-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.