http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112354375-B

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D71-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D67-0072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D67-0039
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D67-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D71-02
filingDate 2020-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-112354375-B
titleOfInvention Decoupling etching method for introducing nano-pores into graphene
abstract The invention provides a decoupling etching method for introducing a nanopore into graphene, which comprises the following steps: putting a graphene sample into a vacuum cavity of a plasma processor, and pumping the air pressure in the cavity to be below 1 Pa; introducing inert gas, controlling the gas pressure to be 10-300Pa through a mass flow meter, starting a plasma processor, controlling the starting power to be 0-100W, and controlling the processing time to be 0-300s to obtain a processed graphene sample; placing the processed graphene sample into a Faraday cage, placing the Faraday cage into a plasma processor, vacuumizing the background of the processor to below 1Pa, introducing etching gas, keeping the gas pressure at 10-200Pa, finally starting the plasma processor, controlling the glow starting power at 1-50W, and processing for 10-180 s to obtain the nanopore with the density of 1.3 x 10 12 cm ‑2 The pore diameter is distributed between 0.3nm and 1 nm.
priorityDate 2020-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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