http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112349856-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
| filingDate | 2020-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112349856-B |
| titleOfInvention | A kind of quantum dot light-emitting diode based on corona discharge interface modification and preparation method thereof |
| abstract | The invention discloses a quantum dot light-emitting diode based on corona discharge interface modification and a preparation method thereof. The quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode. The quantum dots A hole transport layer is arranged between the light-emitting layer and the anode, a hole injection layer is arranged between the hole transport layer and the anode, an electron transport layer is arranged between the quantum dot light-emitting layer and the cathode, and the quantum dots The surface of the light-emitting layer close to the electron transport layer is provided with a negatively charged ion layer or a positively charged ion layer generated by corona discharge. The interface regulation method proposed in the present invention can effectively passivate the defects at the QDs/ZnO interface, thereby greatly increasing the radiative recombination efficiency of electron-holes at low brightness. The present invention provides a simple, cost-effective and novel method that does not complicate device fabrication and device structure to balance the carrier density of the light-emitting layer to improve the efficiency of the QLED device. |
| priorityDate | 2020-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.