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filingDate 2019-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bfe31eba69d6b134cc2b66b7b7d9909
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publicationDate 2021-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-112335016-A
titleOfInvention Efficient cleaning and etching of high aspect ratio structures
abstract A method of processing a substrate includes positioning the substrate in a processing chamber. At least one of a vaporized solvent and a gas mixture comprising the solvent is supplied to the processing chamber to form a conformal liquid layer of the solvent on the exposed surface of the substrate. The at least one of the vaporized solvent and the gas mixture is removed from the processing chamber. A reactive gas containing halogen species is supplied to the processing chamber. The conformal liquid layer adsorbs the reactive gas to form a reactive liquid layer that etches the exposed surface of the substrate.
priorityDate 2018-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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