http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112331780-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_54788ea34576417e85313c7df83ee74c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-166 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate | 2019-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8efa7e3c07a6ce7fe95971e1609e9d78 |
| publicationDate | 2021-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112331780-A |
| titleOfInvention | Quantum dot light-emitting device and preparation method thereof |
| abstract | The present application relates to a quantum dot light-emitting device and a preparation method thereof, wherein the quantum dot light-emitting device comprises a stacked anode, a quantum dot light-emitting layer, an electron transport layer including a nanosheet structure, and a cathode, and the quantum dot light-emitting layer is disposed on the between the anode and the electron transport layer, the electron transport layer is arranged between the quantum dot light-emitting layer and the cathode, and the nanosheet structure includes several nanosheets laid in the electron transport layer . The leakage current of the quantum dot light-emitting device containing the above electron transport layer structure is small, and the device efficiency and stability are improved. |
| priorityDate | 2019-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.