http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112331492-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_55ac52d0a4daaa52604524358bbb5dad |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-13 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-86 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-24 |
| filingDate | 2020-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b70726e44c192336cc91b68dba066dd9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e8d9117c20cb65c9da968b537007671 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc6fcaced066ee62e0b7db9bf3e0e489 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fb7096b0b5e72791f9d6d25c3ed3803 |
| publicationDate | 2021-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112331492-A |
| titleOfInvention | A kind of preparation method of self-supporting porous silicon/ZnO composite material |
| abstract | The invention discloses a preparation method of self-supporting porous silicon/ZnO composite material. For the growth of crystals, the zinc oxide solution was dispersed between the porous silicon layers by vacuum filtration, and grown into zinc oxide seed crystals in an argon atmosphere; for the preparation of composite materials, the hydrothermal synthesis method promoted the zinc oxide seeds between the porous silicon layers. The crystal grows into a nano-zinc oxide layer, forming a micro-nano porous silicon/ZnO composite material. The invention realizes the growth and peeling of the porous silicon wafer layer through the multi-step anodic oxidation etching method of single crystal silicon; realizes the passivation of the surface of the porous silicon through the nano-zinc oxide layer on the surface of the porous silicon, and improves the high resistance of the surface of the porous silicon and high reactivity, which greatly improves the capacitive properties and electrochemical stability of porous silicon, and broadens the application prospects of porous silicon in the field of supercapacitors. |
| priorityDate | 2020-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.