http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112310253-B

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
filingDate 2019-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-112310253-B
titleOfInvention Quantum dot light-emitting diode and preparation method thereof
abstract The invention belongs to the technical field of display, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode, a composite layer and a quantum dot light-emitting layer positioned between the anode and the composite layer; the surface of the composite layer, which is close to the quantum dot light-emitting layer, is made of aluminum oxide, and the aluminum content of the composite layer is gradually increased from the surface, which is close to the quantum dot light-emitting layer, along the surface direction which is far away from the quantum dot light-emitting layer. The device is not only favorable for injecting the electron vector quantum dot light emitting layer, but also can well block the diffusion between the aluminum material in the composite layer and the electron transmission layer, thereby preventing more deep energy level defects such as oxygen vacancies from being formed, and finally improving the efficiency and the service life of the device.
priorityDate 2019-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 31.