| abstract |
Embodiments of the present invention provide a semiconductor structure including a stack of multiple semiconductor layers, a first metal gate stack, a second metal gate stack, a source/drain structure, and source/drain contacts. a stack of a plurality of semiconductor layers on the substrate; a first metal gate stack on the stack of semiconductor layers; a second metal gate stack interleaved between the stacks of semiconductor layers; source/drain structures on the stack of semiconductor layers in; the source/drain contacts are on the source/drain structure. In many instances, the source/drain structure is separated from the sidewalls of the second metal gate stack by a first air gap, and the source/drain contacts are separated from the sidewalls of the first metal gate stack by a second air gap gap. |