| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8fbf590463d3518a746d90a6a2c1c34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e829b93e1bdf87272f2aaf3baaaa0f4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2019-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d1646e779e1d9950560efd8480f1fbd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c33a5161515fa37b4056885e3b3af1d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef7250c438c89a01e6d82e3e0428b53d |
| publicationDate |
2021-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112289675-A |
| titleOfInvention |
Method for forming semiconductor structure and semiconductor structure |
| abstract |
A method for forming a semiconductor structure and a semiconductor structure, comprising: providing a substrate; forming a gate structure on the substrate, the gate structure extending along a first direction; A trench is formed in the structure, and the trench penetrates the gate structure along a second direction, and the second direction is different from the first direction; the trench is cleaned for the first time, and the first The first cleaning process is used to remove non-metallic residues; the trenches are subjected to a second cleaning process, and the second cleaning process is used to remove metal residues. The non-metallic residues formed in the trenches are removed by the first cleaning treatment; the metal residues in the trenches are removed by the second cleaning treatment, reducing the metal residues in the trenches. The bottom of the trench is electrically connected to the adjacent gate structures, thereby reducing the leakage phenomenon between the adjacent gate structures and improving the performance and yield of the final product. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115911075-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115911075-B |
| priorityDate |
2019-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |