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filingDate 2020-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d99766c751dae00142f08d979b52179c
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publicationDate 2021-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-112251773-A
titleOfInvention Method for improving photoelectrochemical property of metal oxide semiconductor electrode material through different cobalt-based imidazole loads
abstract The invention discloses cobalt-based imidazole coated alpha-Fe 2 O 3 A photoanode material and a preparation method thereof. The invention takes conductive glass as a substrate to prepare alpha-Fe 2 O 3 And cobalt-based imidazole is loaded on the surface of the composite photoelectrode material to form a coating layer, so that the composite photoelectrode material Co-MIm @ Sn-Fe with higher photoelectrochemical property is synthesized 2 O 3 And Co-EIm @ Sn-Fe 2 O 3 . The electrode material comprises a substrate and alpha-Fe 2 O 3 And a cobalt-based imidazole coating. The cobalt-based imidazoleThe coated iron oxide can obviously improve the photoelectrochemical property of the electrode material, and can be applied to the fields of solar photovoltaic cell preparation, photoelectrochemical sensor construction, photoelectrocatalysis water decomposition hydrogen production and the like.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114044559-A
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