| abstract |
The invention relates to a silicon etching solution for removing grain. The etching solution is composed of nitric acid, hydroxylamine nitrate, fluorosulfonic acid, ammonium bifluoride, xenon difluoride, sulfuric acid, thickener and deionized water. The thickener can be any one of polyacrylamide, hexanol, octanol, polyethylene glycol, polyvinylpyrrolidone and the like. In the present invention, hydroxylamine nitrate reacts with fluorosulfonic acid to generate hydrofluoric acid, and xenon difluoride slowly decomposes to generate hydrofluoric acid in an acidic environment, both of which increase the concentration of hydrofluoric acid in the etching solution composition and can inhibit the etching solution composition. The time-dependent change of the material maintains a stable etching rate. The anti-grinding etching solution of the present invention can be directly used for the roughening process of the back of the grinding sheet, etch out the deep mechanical grinding grains, omit the polishing and anti-grinding process, save the cost, improve the production efficiency, and can maintain stability at the same time. etch life. |