http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112233993-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2887 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 |
| filingDate | 2020-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112233993-B |
| titleOfInvention | Method and apparatus for detecting through-wafer via defects |
| abstract | The invention provides a method and a device for directly detecting the on-off state of a through hole. The device can be composed of carbon nanotube probes to form an array template. Move the probe down to the bottom of the hole layer. When the hole layer is completely open or there is a residual dielectric layer, the conductivity of the material at the bottom is different. In this way, the on-off state of the through hole can be directly detected by the change of the voltage on the probe. When the data directly detected by the station is used to feedback whether the previous process parameters are suitable, the problem that the current hole layer detection can only be detected after the metal is filled, and the feedback lag problem is solved. |
| priorityDate | 2020-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.