http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112225565-B
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-428 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6567 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-58092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-645 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-645 |
filingDate | 2020-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2023-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2023-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-112225565-B |
titleOfInvention | A kind of preparation method of tungsten silicon target blank |
abstract | The invention relates to a method for preparing a tungsten-silicon target blank. The preparation method comprises the following steps: (1) mixing tungsten silicide powder and silicon powder to obtain a mixed powder; (2) performing the mixed powder obtained in step (2) hot press sintering to obtain the tungsten-silicon target; the hot press sintering includes the first temperature rise, the second temperature rise and pressurization treatment in sequence. According to the method provided by the invention, through the redesign of the raw materials and the specific hot-pressing sintering process to prepare the tungsten-silicon target blank, a tungsten-silicon target blank with a density ≥ 99% is prepared, and the target blank has no defects and has a uniform microstructure , the tungsten-silicon target produced by it has excellent sputtering performance. |
priorityDate | 2020-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.