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filingDate 2020-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edb7f2cd197fca9e6cf647d5526c23d2
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publicationDate 2021-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-112201630-A
titleOfInvention Three-dimensional stacking and bonding structure of high-density chip and preparation method thereof
abstract The invention discloses a three-dimensional stacking and bonding structure of high-density chips, which comprises at least two preprocessing chips which are plastically packaged by a plastic package body, wherein copper welding disc surfaces of the preprocessing chips are oppositely arranged, at least one group of corresponding copper welding discs are directly bonded through copper welding disc epitaxy, each preprocessing chip comprises a chip, a dielectric layer which is laid on the copper welding disc surface of the chip and is exposed out of the copper welding disc, an organic polymer layer which is arranged on the dielectric layer and is exposed out of the copper welding disc, and the copper welding disc epitaxy wrapped by the organic polymer layer and the dielectric layer. And the organic polymer layers of the corresponding bonded copper pad epitaxial edges are bonded into a unified whole. The invention also discloses a preparation method of the three-dimensional stacking and bonding structure of the high-density chip. The design scheme of the invention can be applied to the field of three-dimensional packaging, and can be used for high integration and miniaturization of a power-assisted high-density chip and a module.
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