http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112185967-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11524 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11519 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11551 |
| filingDate | 2020-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112185967-B |
| titleOfInvention | A kind of three-dimensional memory and its production method |
| abstract | The present invention provides a three-dimensional memory and a manufacturing method thereof. The three-dimensional memory includes a stacked structure, a dummy structure and a gate line slot, wherein the stacked structure includes a gate line layer and an isolation layer alternately stacked in a vertical direction, the dummy structure and the The gate line slits all run through the stacked structure in the vertical direction, the dummy structure includes a first dummy part and a second dummy part, one end of the gate line slit extends into the gap formed by the first dummy part and/or the second dummy part, and the first dummy part and/or the second dummy part. At least one of the dummy portion and the second dummy portion overlaps with the projection portion of the grid line slit on the horizontal plane, so as to realize the connection between the dummy structure and the grid line slit. The dummy structure design, which wraps the end of the gate line gap but does not completely overlap, can effectively improve the process window problem of gate line gap etching at the junction of the dummy structure and the gate line gap, and effectively reduce/eliminate the dummy structure and the gate line. The weak point at the junction of the gap helps to improve the reliability of the device. |
| priorityDate | 2020-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.