| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11524
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2020-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c587bef06347064d44377a5bede0126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23a4b12f0241e6251d1a8fef68d21b3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bc16049ba3a1c687e29f91079861235 |
| publicationDate |
2021-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112185812-A |
| titleOfInvention |
Etching processing method and substrate processing apparatus |
| abstract |
Provided is an etching treatment method capable of improving the selectivity ratio of a base layer to a film to be etched. The etching processing method includes the step of preparing a substrate on which a laminated film having at least a silicon-containing insulating layer, a base layer disposed under the silicon-containing insulating layer, and a substrate disposed on the silicon-containing insulating layer are prepared in a processing container. a mask layer on top of a silicon insulating layer; a process of supplying a process gas containing at least a fluorocarbon gas and a rare gas; and generating plasma in a process vessel supplied with the process gas to etch the laminated film A process wherein the rare gas comprises a first gas having a higher ionization energy than the Ar gas and the ionized individual particles having a momentum lower than that of the ionized Ar gas individual particles. |
| priorityDate |
2019-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |