http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112077691-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B55-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B7-17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B7-228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B55-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B7-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B7-17 |
| filingDate | 2020-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112077691-B |
| titleOfInvention | A kind of polishing method of gallium antimonide single wafer |
| abstract | The present invention provides a method for polishing a gallium antimonide single wafer, which includes the following steps: 1) grinding both sides of the gallium antimonide single wafer to remove damage on the surface of the gallium antimonide single wafer; 2) grinding the surface of the gallium antimonide single wafer The gallium antimonide single wafer is chemically mechanically polished by using a polishing cloth and a polishing liquid; 3) the gallium antimonide single wafer after chemical mechanical polishing is removed and cleaned. By selecting and optimizing the composition and content of the polishing liquid and the polishing cloth matched with it, the invention realizes the one-step molding of the gallium antimonide single wafer polishing, without the need for three-step polishing of rough polishing, medium polishing and fine polishing. It is simple and stable, and the surface quality of the gallium antimonide single wafer after polishing is high, without scratches and fogging defects, and the surface roughness is low, and the roughness value Ra is less than 0.15nm. |
| priorityDate | 2020-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.