http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112002558-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J23-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J35-004 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J23-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-20 |
| filingDate | 2020-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112002558-B |
| titleOfInvention | Silicon-based semiconductor MIS structure and preparation method, photoelectric cathode and application thereof |
| abstract | The invention belongs to the technical field of semiconductor electrodes, and discloses a silicon-based semiconductor MIS structure, a preparation method thereof, a photocathode and application thereof 2 Then, after the p-type silicon substrate is functionalized, Al is deposited on the surface of the p-type silicon substrate by an atomic layer 2 O 3 Nanolayers or TiO 2 Depositing a metal Ti nano layer on the surface of the nano layer to obtain a silicon-based semiconductor MIS structure; a catalyst layer is deposited on a metal Ti nano layer to form a silicon-based semiconductor MIS junction photocathode, and the photocathode is applied to hydrogen production by water photolysis of a photoelectrochemical cell. The invention utilizes Al 2 O 3 Nanolayers or TiO 2 The nano layer serves as an ultrathin tunneling layer and has a passivation effect on the p-type silicon substrate, so that the interface recombination between p-Si and Ti is effectively reduced, the separation of photon-generated carriers is promoted, and the photon-generated voltage of the p-type silicon is promoted. |
| priorityDate | 2020-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.