http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111994867-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_214fc43c90f0afd54a2c4ad29324c491 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00531 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00396 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-0019 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00063 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 |
| filingDate | 2020-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9b55000c8905ae43a118ecba677c96c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e85ccaf71d9eb96686a5b053881f4326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04eeb4c5c89885515f2bda79620e0ba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97b229c7135b885e2d6ae15729d0a6d8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe08db428f188a40119d3bdea7252038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c15cfa6a7012a5c34197aabb7b75294 |
| publicationDate | 2020-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111994867-A |
| titleOfInvention | A method for fabricating large-area controllable nanochannels based on a floating mask and growing thin film method |
| abstract | The invention discloses a method for preparing a large-area controllable nano-channel based on a floating mask and growing thin film method. A single-throw <100> silicon wafer with a thickness of 450 microns and a thickness of 2 inches and a micro-bridge structure with a width of several 2 microns are prepared. First, spin-coat a layer of LOR10B primer on the surface of the cleaned silicon wafer, and drop LOR10B on the silicon wafer so that the glue can completely cover the silicon wafer. A method for preparing large-area controllable nano-channels based on a floating mask and growing thin film method of the present invention adopts the floating mask technology, the angle evaporation growing thin film method and the reactive ion etching technology to prepare the nano-channels on the silicon wafer Road; photoresist suspended micro-bridges are obtained by UV exposure double-layer adhesive development, and then an aluminum film is grown by an angle of electron beam evaporation to obtain the nano-gap of the aluminum film. Finally, the aluminum film is used as a mask and etched by reactive ion etching technology. For silicon wafers, silicon nanochannels can be obtained after removing the aluminum film. At the same time, this method can realize large-scale quantitative production and is inexpensive. |
| priorityDate | 2020-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.