http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111987145-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0642 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 2020-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111987145-B |
| titleOfInvention | Superjunction VDMOS Devices Resistant to Total Dose Ionizing Radiation |
| abstract | The invention provides a super-junction VDMOS device resistant to total dose ionizing radiation. The cell region includes a gate oxide layer, an accumulation region oxide layer, gate polysilicon, a body region of the first conductivity type, a body contact region of the first conductivity type, and a second conductivity type body region. Type source region, source metal, strip region of first conductivity type, strip region of second conductivity type, drain metal; at the bottom of the two regions of the cell region and terminal region, there is a second conductivity type buffer layer, a drain pole metal, the present invention introduces a lateral plate connected to the source or negative potential or a potential between the ground potential and the gate potential inside the field oxide layer of the super-junction VDMOS device terminal region, and the lateral plate connects the device The gate wiring or gate polysilicon in the terminal area is isolated from the silicon layer in the body. The gain effect is to shield the influence of the gate bias on the field oxide layer during device operation, and reduce the traps introduced by the total dose radiation in the device field oxide layer. The charge improves the device's ability to resist the total dose of ionizing radiation. |
| priorityDate | 2020-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.