http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111952838-B

Outgoing Links

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-00
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B5-008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0268
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
filingDate 2020-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111952838-B
titleOfInvention A kind of high-efficiency SPP coupler based on semiconductor substrate and fabrication method thereof
abstract The present application discloses a high-efficiency SPP coupler based on a semiconductor substrate and a manufacturing method. The coupler can directly excite the positive and negative electrodes of the coupler structure to apply voltage through current, so that the active area emits light, and the light emission excites the asymmetric metal on the surface of the structure. The grating structure is used to generate SPP with unidirectional transmission. After the SPP is transmitted through the structure, light is scattered by the emission slot, so that the coupler has a high unidirectional transmission ratio. In addition, the preparation method is simple and feasible, the process is simple, the process compatibility is high, and it is suitable for large-scale batch processing.
priorityDate 2020-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.