| abstract |
The present invention provides a wafer surface film deposition device, method and semiconductor device, wherein the device includes: at least two intake air passages; an injection unit connected with the intake air passages, used for according to each intake air The ventilation flow rate of the air passages respectively sprays the reactants to the area on the wafer surface corresponding to each air inlet gas passage; wherein, the area on the wafer surface includes: a circular area with the center of the wafer as the center and at least one annular area, each area corresponding to an intake air path. This solution can control the thickness of the deposited layer during the deposition process by adjusting the airflow flow rate of the circular and annular regions on the wafer surface corresponding to the air inlet gas path, thereby making the deposited layer more uniform and flatter in shape and profile. |