http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111925796-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2020-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111925796-B |
| titleOfInvention | High-selectivity silicon nitride etching solution, preparation method and application thereof |
| abstract | The inventionDiscloses a silicon nitride etching solution with high selectivity ratio, a preparation method and application thereof. The invention provides an etching solution which comprises the following components in parts by weight: 0.5-10 parts of compound A, 76.5-84.6 parts of phosphoric acid and 13.5-14.9 parts of water. The etching solution of the present invention has a proper etching rate selection ratio for the silicon oxide film and the silicon nitride film, can selectively remove the silicon nitride film, can prolong the service life of the etching solution, and can adapt to the increase of the number of the laminated structure layers. |
| priorityDate | 2020-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.