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filingDate 2019-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111902383-B
titleOfInvention Composite sintered body, semiconductor manufacturing device component, and method for manufacturing composite sintered body
abstract The composite sintered body includes Al 2 O 3 and MgAl 2 O 4 . The Al 2 O 3 content in the composite sintered body is 95.5% by weight or more. The average sintered grain size of Al 2 O 3 in this composite sintered body is 2 μm or more and 4 μm or less. The standard deviation of the sintered particle size distribution of Al 2 O 3 in the composite sintered body is 0.35 or less. The bulk density of the composite sintered body is not less than 3.94 g/cm 3 and not more than 3.98 g/cm 3 . The ratio of the crystal phase amounts of MgAl 2 O 4 to Al 2 O 3 in the composite sintered body is 0.003 or more and 0.01 or less. Thereby, a composite sintered compact having a high withstand voltage and a high volume resistivity can be provided.
priorityDate 2018-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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