http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111883411-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81ca9a5f1da06521982d5a6b55b04244 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate | 2020-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3d4bc76720b7cd5c5ee4dac95f18362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19b9b143a4a894e97ef7c851e5ffad22 |
| publicationDate | 2020-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111883411-A |
| titleOfInvention | Methods to Improve Via Etch Residues |
| abstract | The present invention provides a method for improving through hole etching residues. After the metal hard mask is integratedly etched, the method includes: bombarding the sidewall of an etching cavity, so as to make the metal in the etching cavity By-products and non-metallic by-products are dissociated; a first reaction gas is introduced into the etching chamber, and the first reaction gas reacts with the metal by-products to generate a first reactant attached to the etching chamber on the sidewall of the etching chamber; bombard the sidewall of the etching chamber again to free the non-metallic by-products in the etching chamber; pass the second reaction gas into the etching chamber, After the second reactant reacts with the non-metallic by-products, a second reactant is generated and attached to the sidewall of the etching cavity; the surfaces of the first reactant and the second reactant are subjected to processing to repair the internal environment of the etching chamber. The invention solves the problem in the prior art that the through hole etching remains due to the influence of by-products. |
| priorityDate | 2020-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.