| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89f3efb8583f1229b9a555a3776c89ba |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K77-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-15 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate |
2020-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11d39db358b25c900abe53a6c76373e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b69a558062615072c6a0caae81e24d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a553827aad4268e2590f6a989cd9e8fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f9e015c457b2243b0e8989f1fd80f8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_136e35eef467f03634b1d24774d1edea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bad16a978619168eea80099029cada17 |
| publicationDate |
2020-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-111864079-A |
| titleOfInvention |
A double electron transport layer flexible perovskite solar cell and preparation method thereof |
| abstract |
The invention discloses a double electron transport layer flexible perovskite solar cell and a preparation method thereof, wherein the device structure of the double electron transport layer flexible perovskite solar cell is flexible conductive substrate/SnO 2 /CdS sequentially from bottom to top /perovskite absorber layer/hole transport layer/metal electrode. The invention combines SnO 2 and CdS as a double electron transport layer, and the advantages are as follows: (1) CdS and SnO 2 are both prepared at low temperature, which is very suitable for developing flexible photovoltaic devices; (2) CdS thin film has high electron mobility, which helps (3) The SnO 2 layer is deposited between the flexible substrate and the CdS layer of cadmium sulfide, which can improve the problem of unevenness and holes when the CdS layer is directly deposited on the substrate, reduce leakage current, enhance Electronic extraction capability. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114597312-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113097386-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112968134-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112490363-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113782677-A |
| priorityDate |
2020-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |