http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111848698-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F17-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F17-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
| filingDate | 2020-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111848698-B |
| titleOfInvention | Redox lattice arene and synthesis method, organic field effect transistor memory based on the redox lattice arene and preparation method |
| abstract | The invention discloses a redox lattice arene, an organic field effect transistor memory based on the redox lattice arene, and a preparation method, wherein the redox lattice has a symmetrical geometric structure, and has relatively clearly separated LUMO and HOMO energy levels, The structure is as follows: In the present invention, the redox lattice is used as the charge storage layer of the organic field effect transistor memory. The storage device can be used to manufacture non-volatile storage devices, such as mobile hard disks, U disks; and flexible storage devices, such as electronic skins and wearable devices. The field effect memory device shows the advantages of organic memory suitable for flexibility, large area and low process cost. The invention prepares the memory device through a simple process, and reduces the device preparation cost. There are great advantages for the application. |
| priorityDate | 2020-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.