http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111837230-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a3d52eacd83e723ebd2ca61b598586c2 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F30-17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-309 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67242 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
filingDate | 2019-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c5780c688bb5bc6c76f86ec411d6273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30daf44da1db91970387269e830fe2c9 |
publicationDate | 2020-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-111837230-A |
titleOfInvention | Measurement model of nanowire semiconductor structures based on reusable substructures |
abstract | Presented herein are methods and systems for generating measurement models of nanowire-based semiconductor structures based on reusable parametric models. Metrology systems employing these models are configured to measure structural and material properties (eg, material composition of structures and films, dimensional properties, etc.) associated with nanowire semiconductor fabrication processes. The reusable parametric models of nanowire-based semiconductor structures enable substantially simpler, less error-prone, and more accurate measurement model generation. As a result, the time to achieve useful measurements is significantly reduced, especially when modeling complex nanowire-based structures. The reusable parametric models of nanowire-based semiconductor structures are useful for generating measurement models for both optical metrology and x-ray metrology, including soft x-ray metrology and hard x-ray metrology. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113175992-A |
priorityDate | 2018-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.