| abstract |
The object of the present invention is a method of obtaining a nitride (N) layer (550). The nitride layer is preferably obtained from at least one of gallium (Ga), indium (In) and aluminum (Al), and the method includes the steps of: providing a stack comprising a substrate (100) and a sub-substrate (100) at least the following layers arranged in succession: a creep layer (200) having a glass transition temperature T glass transition , a crystalline layer (300); a liner (1000a-1000e) is formed by etching the stack such that each The gaskets (1000a-1000e) include at least: creep portions (220a, 220b) formed by at least a portion of the creep layer (200), and crystalline portions (300a, 300b) formed by the crystalline layer (300); The microcrystals (510a-510e) are epitaxially grown on the pads (1000a-1000e), and the microcrystals (510a-510e) are further epitaxially grown, thereby forming the nitride layer (550). The epitaxial growth is carried out at a temperature T epitaxy such that T epitaxy ≥ k1·T glass transition , k1=0.8. |