| abstract |
The present invention belongs to the field of methods for preparing inorganic metal-containing films. The method for preparing an inorganic metal-containing film comprises contacting a solid substrate with a gaseous compound of general formula (I) or (II), formula (I), formula ( II ), wherein A is NR or OR, wherein R is alkyl, alkenyl, aryl or silyl, E is NR or O, n is 1, 2 or 3, and R' is hydrogen, alkyl, alkenyl, aryl or silyl, where if n is 2 and E is NR or A is OR, then at least one R in NR or OR does not carry a hydrogen atom in the 1-position. |