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filingDate 2020-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2eb2fc93416ca74a6eb4b101624b6312
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publicationDate 2020-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111725301-A
titleOfInvention Gate all around integrated circuit structure with source or drain structure with epitaxial bulk
abstract The present disclosure describes gate-around integrated circuit structures having source or drain structures with epitaxial bumps, and methods of fabricating gate-around integrated circuit structures having source or drain structures with epitaxial bumps. For example, the integrated circuit structure includes a first vertical arrangement of horizontal nanowires and a second vertical arrangement of horizontal nanowires. The first epitaxial source or drain structure includes vertical discrete portions aligned with the first vertical arrangement of horizontal nanowires. The second epitaxial source or drain structure includes vertical discrete portions aligned with the second vertical arrangement of horizontal nanowires. The conductive contact structure is laterally between one of the first epitaxial source or drain structure and one of the second epitaxial source or drain structure, and with the first epitaxial source or drain structure One of the contacts and a second one of the epitaxial source or drain structures.
priorityDate 2019-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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