| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_485aaa03ff36356873962a40da649f87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee6d905e262164773b9ed377631ea77c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 |
| filingDate |
2020-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6ff6b5188936afef49d85cfea1cb74b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff28a8ccda03aa7c220d228af467073a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_593785703bc622fcfd4335434945b436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33676c18cc4b005bc62db68843f515bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_143abb64e263618ceb90c8cadc9c0bb1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_469c01355c159c0d8765b032ce13fd96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37126205f67453611aecfe602ceb8a94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7589c19fc81de60a79f32d469f2d59d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_914926d290f3672e1dc3b95a1e3bb9f1 |
| publicationDate |
2020-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-111710785-A |
| titleOfInvention |
A pinhole-free large-area controllable growth perovskite film-forming process |
| abstract |
The invention relates to a perovskite film - forming process without pinholes and large-area controllable growth. The isopropanol solution of MAI/FAI was spin-coated on the PbI 2 film. The beneficial effects of the present invention are as follows: the present invention provides a low-surface-energy material for large-area thermal evaporation and film quality improvement, which reduces the nucleation activation energy and enhances the deposition of the PbI 2 layer; The reaction is completely carried out, and the rough surface of the bottom layer is better covered. The use of low surface energy additives better matches the polarity of the substrate and the perovskite layer, which effectively avoids the phenomenon of shrinkage caused by the change of local hydrophilicity and hydrophobicity. At the same time as the film quality, the crystal quality can be effectively controlled to achieve a controllable large-area dense and pinhole-free film formation technology. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112289932-A |
| priorityDate |
2020-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |