http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111710650-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 |
| filingDate | 2020-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111710650-B |
| titleOfInvention | GaN device based on double-channel gate and preparation method thereof |
| abstract | The invention provides a GaN device based on a double-channel gate and a preparation method thereof, wherein the preparation method comprises the following steps: providing a semiconductor substrate, forming an epitaxial structure, forming a source electrode and a drain electrode, etching part of a barrier layer and an epitaxial cap layer of the epitaxial structure to obtain a groove structure and a protruding structure which are alternately arranged, and forming a gate dielectric layer and a gate electrode layer. According to the invention, the first device and the second device which are alternately arranged are formed on the GaN channel layer, and can be an MOS device structure and an HEMT device structure which are alternately arranged, so that the linearity of the whole GaN device can be improved based on the MOS device structure and the HEMT device structure. The gate oxide adopts BeO, the polarization effect and the heat dissipation are enhanced simultaneously, the TixAly layer is adopted as the material of the source electrode and the drain electrode, and the direct contact ohmic contact is realized through the Ti-Al alloy film without gold, so that the high-conductivity 2DEG is favorably maintained, the lower contact resistance and the flatter contact interface are favorably obtained, and the compatibility with the Si process is realized. |
| priorityDate | 2020-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.