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filingDate 2019-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111668308-A
titleOfInvention Semiconductor device and method for manufacturing the same
abstract A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes: a substrate having a first active region and a second active region; first and second active patterns on the first and second active regions, respectively; a first gate electrode and a second gate electrode extending across the first active pattern and the second active pattern, respectively; and a high-k dielectric layer between the first active pattern and the first gate electrode and between the second active pattern and the second gate electrode. The first gate electrode includes a work function metal pattern and an electrode pattern. The second gate electrode includes a first work function metal pattern, a second work function metal pattern, and an electrode pattern. The first work function metal pattern includes the same impurity as that of the high-k dielectric layer. The impurity concentration of the first work function metal pattern of the second gate electrode is greater than the impurity concentration of the work function metal pattern of the first gate electrode.
priorityDate 2019-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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