http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111630734-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48464 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0215 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-176 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0753 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0217 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02 |
| filingDate | 2018-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2023-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2023-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111630734-B |
| titleOfInvention | Method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component |
| abstract | The invention relates to a method for producing an optoelectronic semiconductor component (1), comprising the steps of: A) growing a radiation-generating semiconductor layer sequence (3) on a growth substrate (2), B) depositing the semiconductor layer The sequence (3) is structured into emission branches (11) such that the semiconductor layer sequence (3) is removed in the gaps (12) between adjacent emission branches (11), C) a passivation layer is applied ( 4), wherein the semiconductor layer sequence (3) remains at least partially exposed at the waveguide contact (51) facing away from the growth substrate (2) and the interspace (12) remains at least partially exposed, D) produces at least one metal layer ( 50), said at least one metal layer extending from the waveguide contact (51) into the void (12), E) passing through the carrier (6) instead of the growth substrate (2), F) creating a via in the carrier (6) (53), bringing the metal layer (50) into electrical contact with the underside contact (52) of the semiconductor layer sequence (3) facing the carrier (6), and removing between at least some of the emission branches (11) and The carrier (6) between the emitting elements (13) following each other along the emitting branch (11), and G) breaks off the semiconductor layer sequence (3) between the emitting elements (13), so that facets are formed (31). |
| priorityDate | 2017-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.